期刊
CARBON
卷 68, 期 -, 页码 480-486出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2013.11.024
关键词
-
资金
- National Basic Research Program of China [2012CB932301]
- National Natural Science Foundation of China [90921012]
High-efficiency dielectrics are promising materials that may enable nanoelectronic devices, such as carbon nanotubes and graphene transistors, to reach their performance limits. A high current on/off ratio, low voltage operation, high on-current and current saturation were all realized in a chemical vapor deposition graphene transistor by using a high-efficiency ion-gel dielectric. Using a drift-diffusion device model based on the surface potential in the channel that also considers the contact resistance at the channel boundary, the output characteristics of the graphene transistor are simulated, which agrees well with the experimental data and indicates that the current saturation in the graphene channel is intrinsic ambipolar performance under low field conditions. We also demonstrate an ambipolar invertor based on these high performance graphene transistors with gain values as high as 4. (C) 2013 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据