期刊
CARBON
卷 79, 期 -, 页码 388-392出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2014.07.081
关键词
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资金
- National Research Foundation of Korea (NRF) - Korean Government [2012R1A2A2A01046451]
- National Research Foundation of Korea [2012R1A2A2A01046451] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni-2(CO3)(OH)(2)] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes. (C) 2014 Elsevier Ltd. All rights reserved.
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