期刊
CARBON
卷 50, 期 12, 页码 4476-4482出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2012.05.026
关键词
-
资金
- Prof. Ajayan's Laboratory
- Fundamental Research Funds for the Central Universities [lzujbky-2011-52]
- Key Laboratory of Materials for High-Power Laser Shanghai Institute of Optics and Fine Mechanics
- Exotic Nanocarbons, Japan Regional Innovation Strategy Program by Excellence, JST
Large area nitrogen (N)-doped graphene films were grown on copper foil by chemical vapor deposition. The as-grown films consisted of a single atomic layer that was continuous across the copper surface steps and grain boundaries, and could be easily transferred to a variety of substrates. N-doping was confirmed by X-ray photoelectron spectroscopy, Raman spectroscopy, and elemental mapping. N atoms were suggested to mainly form a pyrrolic nitrogen structure, and the doping level of N reached up to 3.4 at.%. The N-doped graphene exhibited an n-type behavior, and nitrogen doping would open a band gap in the graphene. This study presents use of a new liquid precursor to obtain large area, continuous and mostly single atom layer N-doped graphene films. (C) 2012 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据