期刊
CARBON
卷 49, 期 12, 页码 3796-3802出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2011.04.071
关键词
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资金
- Chinese Academy of Sciences (CAS)
- State Key Project of Fundamental Research of China (973 Program)
- National Natural Science Foundation of China
- Zhejiang Qianjiang Talent Project
- Zhejiang and Ningbo Natural Science Foundations
The mechanism of the resistive switching (RS) effect in graphene oxide (GO) thin films prepared by the vacuum filtration method has been investigated by macroscopic current-voltage (I-V) measurements and conducting atomic force microscopy (CAFM). Detailed I-V measurements show that in metal/GO/Pt sandwiches, the RS originates from the formation and rupture of conducting filaments. An analysis of the temperature dependence of the ON-state resistance reveals that the filaments are composed of metal atoms due to the diffusion of the top electrodes under a bias voltage. Moreover, the RS is found to occur within confined regions of the metal filaments. The RS effect is also observed in GO/Pt structures by CAFM. It is attributed to the redox reactions between GO and adsorbed water induced by external voltage biases. (C) 2011 Elsevier Ltd. All rights reserved.
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