Quantifying ion-induced defects and Raman relaxation length in graphene

Raman scattering is used to study disorder in graphene subjected to low energy (90 eV) Ar' ion bombardment The evolution of the intensity ratio between the G band (1585 cm(-1)) and the disorder-induced D band (1345 cm(-1)) with ion dose is determined, providing a spectroscopy-based method to quantify the density of defects in graphene This evolution can be fitted by a phenomenological model, which is in conceptual agreement with a well-established amorphization. trajectory for graphitic materials Our results show that the broadly used Tuinstra-Koenig relation should be limited to the measure of crystallite sizes, and allows extraction of the Raman relaxation length for the disorder-induced Raman scattering process (C) 2010 Elsevier Ltd All rights reserved