Zn-Se-Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers

Detailed studies with spectral and time-resolved photoluminescence, photoluminescence excitation, and absorption spectroscopies show the formation of type-II quantum structures (quantum dots) in a Zn-Se-Te multilayer system with submonolayer quantities of Te. Moreover, it is shown that in addition to these quantum dots, Te isoelectronic centers are also present in the same material system and contribute to the photoluminescence emissions. This could be siginificant for the better understanding of the scaling laws between many-atom systems (e.g., quantum dots) and few-atom systems (e.g., isoelectronic centers).