期刊
PHYSICAL REVIEW B
卷 71, 期 3, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.71.035326
关键词
-
The influence of growth temperature in the regime of dome formation in Stranski-Krastanow growth is studied systematically on a series of Ge on Si(001) samples. A combination of complementary x-ray scattering methods is applied, in order to resolve the island size, their strain state, and the composition distribution. The composition is determined using anomalous x-ray diffraction at high momentum transfer in combination with atomic force microscopy and from x-ray reciprocal space mapping. For growth temperatures between 620 and 840 degreesC, the maximum Ge content of the as-grown islands decreases from about 70 to about 22%. The results are corroborated by a selective etching study of the Ge islands.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据