4.6 Article

Magnetoconductivity of insulating silicon inversion layers - art. no. 033312

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PHYSICAL REVIEW B
卷 71, 期 3, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.71.033312

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The normalized in-plane magnetoconductivity of the dilute strongly interacting system of electrons in silicon metal-oxide-semiconductor field effect transistors scales with B/T for low densities in the insulating phase. Pronounced deviations occur at higher metalliclike densities, where an energy scale k(B)Delta emerges which is not associated with either magnetic field or thermal effects. While the energy scale k(B)Delta vanishes at n(0) approaching from the metallic side, we do not find a finite Delta which goes to zero approaching n(0) from the insulating side.

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