4.6 Article

Simulation of heterojunction organic thin film devices and exciton diffusion analysis in stacked-hetero device

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JOURNAL OF APPLIED PHYSICS
卷 97, 期 1, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.1823580

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A two-dimensional device simulation methodology for organic heterojunction thin film devices has been developed. Multilayer organic light emitting diodes, organic thin film heterojunction field effect transistors, and stacked heterojunction organic complementary devices were simulated. Heterojunction organic layer devices have been analyzed using a two-dimensional simulator with heterointerface models and organic material specific models. The stacked heterojunction organic double carrier device exhibits both horizontal and vertical carrier flow in the organic thin film. This unique dual-directional carrier flow shows efficient electron-hole recombination resulting in exciton generation in the organic heterojunction layers. Furthermore, the enhanced behavior of the generated excitons has been analyzed using a self-consistent exciton diffusion model. The vertical (thickness) diffusion of the excitons and the lateral (along heterointerface) diffusion (accompanied by exciton hopping) were simulated. The exciton diffusion model is applicable to electroluminescent characteristics in organic devices. This feature is one of the essential differences between the present model for high-injected polymer devices and conventional drift-diffusion transport in nonpolymer semiconductor devices. (C) 2005 American Institute of Physics.

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