Photovoltaic p-i-n structure of Sb2S3 and CuSbS2 absorber films obtained via chemical bath deposition

Chemically deposited, near-intrinsic Sb2S3 thin films and p-CuSbS2 thin films obtained through heating Sb2S3-CuS thin films have been integrated into a p-i-n structure: SnO2:F-(n)CdS:In-(i)Sb2S3-(p)CuSbS2-Ag. An open-circuit voltage of 345 mV has been observed under an intensity of illumination of 1 kW m(-2) using a tungsten-halogen lamp. The short-circuit current was 0.2 mA/cm(2). Structural, optical, and electrical properties of Sb2S3 and CuSbS2 are presented. X-ray photoelectron spectroscopy depth profile on the CuSbS2 film indicated uniformity in composition with respect to Cu, Sb, and S atoms through the film thickness. X-ray diffraction studies using standard mode and grazing incidence at fixed angles showed the layer structure of the photovoltaic p-i-n device. (c) 2005 The Electrochemical Society. All rights reserved.