期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 37-41, 页码 L1161-L1163出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1161
关键词
InGaAsBi; MBE; metastable alloy; X-ray diffraction; RBS
A new Bi-containing III-V semiconductor InGaAsBi alloy was firstly grown by molecular beam epitaxy (MBE). The high crystalline quality of the InGaAsBi epilayer with smooth interfaces was confirmed by X-ray diffraction measurements. Up to 2.5% Bi was incorporated in the film based on Rutherford back scattering (PBS) results. The RBS channeling spectra give clear evidence that the Bi atoms were substitutionally located in the InGaAs zinc-blende lattice sites.
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