Field-effect transistors based on single-crystalline wires of bis-(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole)

We prepared single-crystalline wires of bis(1, 2, 5-thiadiazolo)-p-quinobis(1, 3-dithiole), whose ends were anchored to the drain and source electrodes of bottom-contact-type field-effect transistors. The temperature dependence of carrier mobility was investigated in the range from 5 K to 330 K. The tunnel transport was found to be dominant at T < 30 K. Thermally activated hopping behavior was observed in the temperature range from 30K to 200K. The mobility decreased with increasing temperature at T > 200K, indicating that phonon scattering governs carrier transport in single-crystalline wires.