期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 16-19, 页码 L543-L545出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L543
关键词
gallium nitride; semiconductor-electrolyte contacts; photoelectrochemical cells; photoelectrolysis; water splitting
Hydrogen gas generation from a counterelectrode was clearly observed for the first time using light-illuminated n-type GaN as a working photoelectrode, in an electrolyte. The application of extra bias to a working electrode was required to obtain a sufficient volume of generated gas. The reactions at the GaN photoelectrode were both GaN decomposition and water oxiclization, simultaneously.
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