期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 28-32, 页码 L909-L911出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L909
关键词
gallium nitride; semiconductor-electrolyte contacts; photoelectrochemical cells; photoelectrolysis; p-type
We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.
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