3.8 Article

Photoelectrochemical properties of p-type GaN in comparison with n-type GaN

出版社

INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L909

关键词

gallium nitride; semiconductor-electrolyte contacts; photoelectrochemical cells; photoelectrolysis; p-type

向作者/读者索取更多资源

We studied the photoelectrochemical properties of p-type GaN compared with those of n-type GaN. Band-edge potentials of p-type GaN were determined from the Mott-Schottky plot, and we clarified the potentials to be identical to those of n-type GaN. Photocurrent in p-type GaN shows its potential as an electrode for photoelectrolysis of water.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

3.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据