期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 33-36, 页码 L1063-L1065出版社
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1063
关键词
pulsed laser deposition; TiO2; transparent conducting oxide; epitaxial; thin film
We present electrical transport and optical properties of Ta-doped TiO2 epitaxial thin films with varying Ta concentration grown by the pulsed laser deposition method. The Ti0.95Ta0.05O2 film exhibited a resistivity of 2.5 x 10(-4) Omega cm at room temperature, and an internal transmittance of 95% in the visible light region. These values are comparable to those of a Widely used transparent conducting oxide (TCO), indium tin oxide. Furthermore, this new material falls into a new category of TCOs that utilizes d electrons.
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