期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 20-23, 页码 L617-L619出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L617
关键词
high-angle annular dark-field imaging; high-k gate dielectrics; oxide/semiconductor interfaces; scanning transmission electron microscopy
Atomic resolution high-angle annular dark-field imaging in scanning transmission electron microscopy is used to determine atomic arrangements at LaAlO3/Si interfaces, which were obtained by growing Si films epitaxially on (001) LaAlO3 single crystals. An unusual 3 x 1 interface reconstruction, in which every third La column is removed from the interface plane, is observed. The interface atomic structure is discussed in the context of electrically favorable interfacial bonding between the ionic oxide and Si.
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