期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 37-41, 页码 L1241-L1243出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1241
关键词
transition-metal oxides; electro-resistance; non-volatile memory; interface; Schottky
We have examined the colossal electro-resistance memory effect for the metal/La2CuO4 (M/LCO) junctions with M = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current-voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr0.7Ca0.3MnO3 junctions, and can be attributed to the charging effect at the Schottky-like interface.
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