3.8 Article

Colossal electro-resistance memory effect at metal/La2CuO4 interfaces

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JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1241

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transition-metal oxides; electro-resistance; non-volatile memory; interface; Schottky

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We have examined the colossal electro-resistance memory effect for the metal/La2CuO4 (M/LCO) junctions with M = Au, Ti, and Al. Among the junctions, the Ti and Al/LCO junctions exhibited hysteretic and nonlinear Schottky-like current-voltage characteristics, whose resistance could also be switched by pulsed voltage stresses. The resistance switching properties are similar to those previously reported in a Ti/Pr0.7Ca0.3MnO3 junctions, and can be attributed to the charging effect at the Schottky-like interface.

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