期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 8-11, 页码 L334-L337出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L334
关键词
amorphous semiconductors; amorphous selenium; amorphous arsenic selenide; photoconductivity; crystallization; photodetector
Photoconductivity measurements of amorphous selenium (a-Se) and arsenic selenide (a-AS(2)Se(3)) were carried out. Samples where annealed from 333-358 K at 5 K step for 5 minutes and the photoconductivity was measured after each annealing step. It was found that the dark current increases permanently for a-Se and the photoconductivity ratio increased drastically after 338 K, but drops after further annealing. Amorphous-As2Se3 however, has no noticeable change in the dark current neither in the photoconductivity ratio. Arsenic is introduced into a-Se to prevent degradation, which causes loss of image quality, but the volume must be controlled in order to maintain high photoconductivity.
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