期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 44, 期 46-49, 页码 L1426-L1429出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.44.L1426
关键词
spintronics; ferromagnetic semiconductor; magnetism; germanium; manganese; magnetic circular dichroism; molecular beam epitaxy
We investigated the origin of ferromagnetism in epitaxially grown Mn-doped Ge thin films. Using low-temperature molecular beam epitaxy, Mn-doped Ge films were successfully grown without precipitation of ferromagnetic Ge-Mn intermetallic compounds, such as Mn5Ge3, Magnetic circular dichroism measurements revealed that the epitaxially grown Mn-doped Ge films exhibited clear ferromagnetic behavior, but the Zeeman splitting observed at the critical points was not induced by the s,p-d exchange interactions. High-resolution transmission electron microscopy and energy dispersive X-ray spectroscopy analyses show phase separation of amorphous Ge1-xMnx clusters with high Mn content from a Mn-free monocrystalline Ge matrix. Since amorphous Ge1-xMnx was characterized as a homogeneous ferromagnetic semiconductor, the precipitation of the amorphous Ge1-xMnx clusters is the origin of the ferromagnetic semiconductor behavior of the epitaxially grown Mn-doped Ge films.
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