期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 8, 期 10, 页码 C148-C150出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2033616
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Large-area nanostructured noble-metal films (Ag, Pt, and Au) can be deposited with high yields and various morphologies on silicon formed between the semiconductor and the noble metal by means of a galvanic cell. It is shown that the morphology of Ag, which is different from that of Pt and Au, can be influenced markedly by the deposition conditions. Distinctive surface-enhanced Raman-scattering features are observed on these Ag films. (c) 2005 The Electrochemical Society.
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