期刊
ELECTROCHEMICAL AND SOLID STATE LETTERS
卷 8, 期 8, 页码 G204-G208出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.1945371
关键词
-
Ti-catalyzed Si nanowires were grown by molecular-beam epitaxy using Si2H6 as the Si source gas and As and B from effusion cells as the doping sources. In situ doping of the Si nanowires was used to form rectifying p-n junctions. Recombination-generation current and series resistance can be observed in selected voltage regions. A structure containing n-type nanowires and a tungsten gate layer was fabricated with the nanowires remaining attached to the substrate at their original growth locations. The current-voltage characteristics of the in situ vertical gated structure can be modulated by an applied gate voltage. (c) 2005 The Electrochemical Society.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据