It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V-Si-V-C)(0), which have the triplet ground state. The energy level scheme and the mechanism of creating the photoinduced population inversion of the triplet sublevels of the divacancy ground state are determined. It is concluded that there is a singlet excited state through which spin polarization is accomplished, and this fact opens the possibility of detecting magnetic resonance on single divacancies. (C) 2005 Pleiades Publishing, Inc.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据