Study of the properties of a two-dimensional electron gas in p(-)-3C-SiC/n(+)-6H-SiC heterostructures at low temperatures

The photoluminescence and magnetoresistance spectra of p(-)-3C-SiC/n(+)-6H-SiC heterostructures are studied at temperatures ranging from 6 to 80 K. These studies show that the heterojunction affects both the photoluminescence spectrum and the magnetoresistance. However, the rather poor structural quality of the epitaxial structures has so far prevented the classical effects for structures with a two-dimensional electron gas from being observed. Presumably, a refinement of the experimental technique and, also, optimization of the growth and postgrowth technologies for SiC will make it possible to observe these effects in the near future. (c) 2005 Pleiades Publishing, Inc.