Properties of structures based on laser-plasma Mn-doped GaAs and grown by MOC-hydride epitaxy

A method of doping GaAs with Mn using the laser evaporation of a metal target during MOC-hydride epitaxy is developed. The method is used to form both homogeneously doped GaAs:Mn layers and two-dimensional structures, including a delta-doped GaAs:Mn layer and a InxGa1 - xAs quantum well separated by a GaAs spacer with a thickness of d = 3-6 nm. It is shown that, at room temperature, the formed structures have magnetic and magnetooptical properties most probably caused by the presence of MnAs clusters. In the low-temperature region (similar to30 K), the anomalous Hall effect is observed. This effect is attributed to the exchange interaction between Mn ions via 2D-channel holes. (C) 2005 Pleiades Publishing, Inc.