期刊
IEEE TRANSACTIONS ON POWER ELECTRONICS
卷 21, 期 1, 页码 3-10出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TPEL.2005.861110
关键词
metal-oxide semiconductor field-effect transistors (MOSFETs); nonsynchronous buck converter
This paper uses generic equations to model the switching performance of metal oxide semiconductor field effect transistors (MOSFETs). Two MOSFETs with different gate structures are analyzed and switching times are presented, which are compared against practical measurements. It is shown that it is possible to get a reasonable accuracy of the switching performance of a MOSFET in a nonsynchronous buck converter, but care must be taken to ensure the correct values of the parameters are used. It is also shown that the MOSFET with the thick bottom oxide gate provides a faster switching instant when compared to a conventional U-Trench gated MOSFET.
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