期刊
IEEE JOURNAL OF QUANTUM ELECTRONICS
卷 42, 期 9-10, 页码 942-952出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2006.880380
关键词
gain; linewidth enhancement factor (LEF); quantum dot (QD); semiconductor lasers
A theoretical and experimental study of the optical gain, refractive index change, and linewidth enhancement factor (LEF) of a p-doped quantum-dot (QD) laser is reported. These parameters are measured by injecting an external pump, which induces cross-gain and cross-phase modulation. A comprehensive theoretical model for the optical gain and refractive index change of InAs QD lasers is introduced with the quasi-equilibrium approximation of carrier distribution. We use the Gaussian lineshape function for gain change and the confluent hypergeometric function of the first kind for refractive index change, which satisfies the Kramers-Kronig relation. We match the experimental data with the theoretical results when the thermal effect is isolated by an additional pulsed current measurement. We also calculate theoretically the optical gain, refractive index change, and LEF of an undoped QD laser of the same structure except the absence of p-type doping. We show that the differential gain and LEF of the p-doped QD laser are improved compared. with those of the undoped QD laser due to the reduced transparency carrier density.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据