期刊
PHYSICAL REVIEW B
卷 73, 期 22, 页码 -出版社
AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.73.220406
关键词
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We discuss the influence of the magneto-Coulomb effect (MCE) on the magnetoconductance of spin-valve devices. We show that the MCE can induce magnetoconductances of several percent or more, depending on the strength of the Coulomb blockade. Furthermore, the MCE-induced magnetoconductance changes sign as a function of gate voltage. We emphasize the importance of separating conductance changes induced by the MCE from those due to spin accumulation in spin-valve devices.
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