4.6 Article

Tunable temperature-induced magnetization jump in a GdVO3 single crystal

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PHYSICAL REVIEW B
卷 73, 期 2, 页码 -

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AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevB.73.024428

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We report on a feature of the temperature-induced magnetization jump observed along the a axis of the GdVO3 single crystal at temperature T-M approximate to 8 K. Below T-M, the compound shows no coercivity and remanent magnetization indicating a homogenous antiferromagnetic structure. However, we will demonstrate that the magnetic state below T-M is indeed history dependent and it shows up in different jumps in the magnetization only when warming the sample through T-M. Such a magnetic memory effect is highly unusual, suggesting different domain arrangements in the supposedly homogenous antiferromagnetic phase of the compound.

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