期刊
出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2005.08.066
关键词
silicon carbide; amorphous structure; atomic pair-distribution function; transmission electron microscopy
Chemical short-range order of ion-beam-induced amorphous SiC (a-SiC) has been examined by transmission electron microscopy in combination with imaging plate techniques. Single crystals of 6H-SiC were irradiated with 300 keV xenon ions to a fluence of 10(15) cm(-2) at cryogenic and elevated temperatures. Atomic pair-distribution functions showed that not only heteronuclear (Si-C) bonds but also homonuclear (Si-Si and C-C) bonds exist within the first coordination shell of a-SiC networks. It was found that chemical short-range order of a-SiC depends on the ion irradiation conditions: the amorphous networks became more chemically disorder with decreasing the irradiation temperature. (c) 2005 Elsevier B.V. All rights reserved.
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