期刊
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
卷 153, 期 12, 页码 G1015-G1019出版社
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1.2352045
关键词
-
The process of bonding InP/InGaAsP dies to a processed silicon-on-insulator wafer using sub-300 nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing. (c) 2006 The Electrochemical Society.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据