A comparative study on MOVPE InN films grown on 3c-SiC/Si(111) and sapphire

This paper reports the MOVPE growth of InN on a 3c-SiC/Si template formed by C(+)-ion implantation into Si(I 11). Properties of grown films on the template are compared with those grown on sapphire in the same run. By employing the nitridation process of the template at 900 degrees C for 30 min just before the GaN buffer growth, the buffer layer becomes to show uniform nucleation. This is due to the improved wettability of GaN layer on the template by the formation of Si-N bonds on the Si-polar SiC layer. The surface mophology of InN film grown on the nitrided template is similar to that for a film grown on a sapphire. The film on the nitrided template shows strong photoluminescence with a peak energy of 0.70 eV at room temperature. The carrier concentration and Hall mobility are 7.6 x 10(18) cm(-3) and 630 cm(2)/Vs, respectively. These data are comparable to those for InN grown on the sapphire (0.71 eV, 6.5 x 10(18) cm(-3) and 870 cm(2)/Vs). Thus, the nitridation process of the 3c-SiC/Si template is found to be effective to obtain high-quality InN film.