Temperature dependence of collapse of quantized Hall resistance

Similarity is observed in the deviation of Hall resistance from the quantized value with the increase in the source-drain current I-SD in Our butterfly-type Hall bars and in the Hall bars used by Jeanneret et al. [IEEE Trans. Instrum. Meas. 44 (1995) 254], while changes in the diagonal resistivity rho(xx) with I-SD are significantly different between these Hall bars. The temperature dependence of the critical Hall electric field F-cr(T) for the collapse of R-H(4) measured in these Hall bars is approximated using F-cr(T) = F-cr(0)(1 - (T/T-cr)(2)). Here, the critical Hall electric field at zero temperature depends on the magnetic field B as F-cr(0) proportional to B-3/2. Theoretical considerations are given on F-cr(T) on the basis of a temperature-dependent mobility edge model and a schema of temperature-dependent inter-Landau level tunneling probability arising from the Fermi distribution function. The former does not fit in with the ISD dependence of activation energy in rho(xx).