Raman scattering characterization on SiC

Raman scattering is a powerful non-contact and non-destructive characterization tool for SiC polytypes for both the lattice and electronic properties. Here, I will briefly review two recent Raman experiments on SiC; metal/SiC interface reactions probed by visible lasers and ion-implantation damages probed by deep UV lasers. These studies utilize the opposite aspects of the probe laser, i.e. deep and shallow penetration depth into SiC. (c) 2005 Published by Elsevier B.V.