期刊
MICROELECTRONIC ENGINEERING
卷 83, 期 1, 页码 27-29出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.mee.2005.10.018
关键词
silicon carbide; embedded epitaxial growth; trench; Pn junction
Embedded epitaxial growth has been carried out oil 4H-SiC substrates with very narrow and deep trenches. The growth behavior near trenches is investigated under various growth conditions. Epitaxial growth oil the sidewalls and at the bottom of trenches was enhanced under a low C/Si ratio which may bring a larger surface diffusion length of reactant species. Pn diodes were fabricated by embedded epitaxial growth on trenched substrates. The crystallographic orientation of the trenches has been found to be important for device fabrication. (c) 2005 Elsevier B.V. All rights reserved.
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