期刊
SOLID-STATE ELECTRONICS
卷 50, 期 1, 页码 24-31出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.sse.2005.10.046
关键词
phase change memories; non-volatile memories; chalcogenide materials
Among the emerging non-volatile technologies, phase change memories (PCM) are the most attractive in terms of both performance and scalability perspectives. The paper reviews the physics underlying PCM operation, the scaling potentials of these devices and some options recently proposed for the cell structure. The paper also addresses the main challenges for the PCM to become fully competitive with standard Flash technology. (c) 2005 Elsevier Ltd. All rights reserved.
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