期刊
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
卷 37, 期 1, 页码 39-47出版社
EDP SCIENCES S A
DOI: 10.1051/epjap:2006151
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Thin lead sulfide films were grown on single crystal GaAs(100) substrates by chemical deposition using Pb(NO3)(2) and CS(NH2)(2) with excess of NaOH in aqueous solution at a range of deposition temperatures 0-50 degrees C. The microstructure and morphology evolution were studied as a function of the deposition conditions, resulting in a wide range of microstructures. Ultrahigh resolution scanning electron microscopy and atomic force microscopy indicated a systematic change in particle shape and surface morphology as a function of deposition temperature and deposition time. X-ray diffraction of 200-500 nm thick films indicated a dominant < 110 > texture throughout the deposition temperature range. At deposition temperatures above 40 degrees C, single crystal films were obtained. Cross-sectional transmission electron microscopy analyses showed a unique (011)(PbS)||(100)(GaAs) and [100](PbS)||[011](GaAs) orientation relationship.
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