期刊
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
卷 20, 期 1, 页码 57-59出版社
TECHNICAL ASSOC PHOTOPOLYMERS,JAPAN
DOI: 10.2494/photopolymer.20.57
关键词
organic field-effect transistor; OTS; naphthalene; thienothiophene
Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C-18-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm(2) V-1 s(-1) were obtained.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据