Inversion domain boundary in a ZnO film

Transmission electron microscopy has been used to investigate the ((1) over bar 100) and ( (1) over bar 103) inversion domain boundaries in a ZnO film prepared by molecular beam epitaxy. The inversion domain was revealed by dark- field images and confirmed by convergent- beam electron diffraction. Interacting with a (0002) stacking fault, the inversion domain boundary in the ( (1) over bar 100) plane alters its orientation from the [0001] direction and climbs on the ( (1) over bar 103) plane to release the strain energy. These features are characterized and analysed by high- resolution electron microscopy and the geometric phase method. The findings are significant for understanding the formation and propagation of inverse domain boundaries in epitaxial ZnO films.