Atomic layer deposition of titanium disulfide thin films

Titanium disulfide thin films are grown by atomic layer deposition (ALD) at 400-500 degrees C using TiCl4 and H2S as precursors. Soda-lime glass, silicon, and thin films of TiN, ZnS, Rh, Ir, Pd, Pt, and Ru are used as substrates. Hexagonal (001)-oriented TiS2 is deposited on ZnS at 400 degrees C with growth rates of between 0.15 and 0.20 angstrom per cycle. Randomly oriented, hexagonal, platelike crystals are deposited on glass and TiN with a growth rate of 0.26 angstrom per cycle. Significant variations in surface morphologies were detected in TiS2 films on various noble metals. TiS2 was also grown on the pore walls of an alumina membrane.