期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
卷 46, 期 9A, 页码 5924-5929出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.5924
关键词
atomistic simulation; phase transformation; silicon; the Tersoff potential; nonhydrostatic stress
Silicon transforms from the diamond cubic structure (Si I) to the beta-tin structure (Si II) under mechanical stress. The phase transition is affected by the stress state. In this study, we conduct an atomistic simulation to determine the ideal phase transition criterion of silicon under nonhydrostatic stress. We also verify the effects of nonequivalent transverse stress and non-< 100 >-oriented transverse stress. As a result, we find that the magnitude of transverse stress mainly affects the phase transition, but both transverse differential stress and non < 100 >-oriented transverse stress have a negligible little effect.
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