期刊
OPTICS COMMUNICATIONS
卷 269, 期 1, 页码 119-127出版社
ELSEVIER
DOI: 10.1016/j.optcom.2006.07.052
关键词
vertical-cavity surface-emitting lasers (VCSELs); optical injection locking; chaos; polarization; semiconductor lasers; spin; birefringence; laser stability
类别
The aim of this paper is to investigate the effects of external optical injection taking account of polarization and electron spill properties in vertical-cavity surface-emitting lasers (VCSELs). Using external polarized injection we seek the locked phases and amplitudes of specific polarized fields in terms of injection level and frequency detuning, taking account of two kinds of distinguishable carrier density (spin-up and spin-down). For the conventional form of optical injection without taking account of spin-polarized fields there are three fundamental equations describing the carrier density, field amplitude and phase. However, by using the spin flip model (SFM), the combined effect of polarized fields along two perpendicular crystal axes and electron spin properties results in six equations. We analyse the conditions for stable locking and also the influence of birefringence effects on the stability map of detuning versus optical injection for both cases of injection polarized parallel and perpendicular to the lasing mode of the solitary VCSEL. For given values of pumping and spin relaxation rate there is a minimum birefringence rate for orthogonal injection. Above this value three regions of elliptical polarization are found in the stability map, namely quasi-stability (QS), coupled limit cycle (CLC) and coupled chaos (CC). The three regions of linear polarization, namely chaos, limit cycle and stability, are reduced in area compared to the case of parallel injection. For orthogonal injection it is found that increased birefringence or reduced spin relaxation rate causes the stable locking region to begin at higher injected power and frequency detuning. (c) 2006 Elsevier B.V. All rights reserved.
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