Electron spin dynamics in GaAsN and InGaAsN structures

We report on optical orientation experiments in undoped GaAsN epilayers and InGaAsN quantum wells (QW), showing that a strong electron spin polarisation can persist at room temperature. We demonstrate that the spin dynamics in these dilute nitride structures is governed by a spin-dependent recombination process of free conduction electrons on deep paramagnetic centres. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.