期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 244, 期 1, 页码 53-58出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.200672511
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We report on low-temperature photoluminescence experiments on self-assembled InAs/GaAs quantum dots under high hydrostatic pressure up to 8 GPa using a diamond anvil cell. The sample exhibits a multimodal size distribution of the quantum dots, which gives rise to a characteristic emission profile displaying up to nine clearly separable peaks attributed to the ground-state recombination from each quantum dot subensemble with different size. Structural analysis revealed that their size differs in entire monolayer steps. The measured pressure coefficients for each subensemble show a linear dependence on their zero-pressure emission energy ranging from 65 meV/GPa for the largest dots to 112 meV/GPa for the smallest ones. Pressure dependent strain simulations based on an atomistic valence-force field yield that the pressure coefficient of the InAs band-gap is strongly reduced when InAs is embedded in a GaAs matrix. Taking into account confinement effects within the envelope function approximation, the calculated pressure coefficients are in good agreement with the experimental findings. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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