期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 19, 期 2-4, 页码 230-232出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2007.891188
关键词
semiconductor optical amplifiers; siliconon-insulator (SOI) technology
We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degrees C. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification.
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