Formation of silicone carbide membrane by radiation curing of polycarbosilane and polyvinylsilane and its gas separation up to 250 degrees C

Silicon carbide (SiC) ceramic coating was developed from precursor polymer blend of polycarbosilane and polyvinylsilane on porous alumina substrate by radiation curing. The polymers were crosslinked with oxygen present in the atmosphere during irradiation and pyrolyzed at 850 degrees C in order to convert the polymer into SiC ceramics. Fabricated SiC film was used as a membrane for gas separation, achieving high separation ratios of 206 for H-2 and 241 for He over the nitrogen at 250 degrees C.