期刊
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
卷 46, 期 1-3, 页码 L4-L6出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.46.L4
关键词
spin injection; perpendicular magnetization; tunneling junction; spin-polarized light-emitting diode; FePt; MgO; GaAs
We have succeeded in demonstrating zero-magnetic-field spin injection in metal-insulator-semiconductor (MIS) structure at room temperature using FePt/MgO/GaAs-based light-emitting diode heterojunction with out-of-plane magnetization. The spin polarization was investigated by spin-polarized electroluminescence (EL). The lower estimate injected at remanence was 1.5% and that injected at 1 T was reached up to 11.5%. The spin injection efficiency was estimated at least 29%. The bias dependence of the EL circular polarization showed that it decreases with increasing bias voltage for both at 1 T and at remanence.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据