Efficient de-embedding technique for 110-GHz deep-channel-MOSFET characterization

In this letter, a de-embedding procedure is proposed to accurately extract the small signal equivalent circuit of advanced MOSFETs up to 110 GHz. This efficient procedure is easy to implement using only one open dummy structure to de-embed the external parasitics (probe pads, interconnecting transmission line, and top-down metallic interconnections and via holes) and is in particular suitable for industrial online automatic test. The method has been validated in the case of 65-nm n-MOSFETs and is proved to be efficient up to 110 GHz.