Oxidation of III-V semiconductors

This paper focuses on the characterization of anodic films (formed in aqueous electrolytes) and thermal oxides (formed at similar to 500 degrees C) on GaAs, InP, AlGaAs, InAlAs, InAlP and heterostructures for GaAs- and InP-based devices. Emphasis is placed on At-containing oxides, particularly on InAlP which possess good insulating properties. The composition and nature of the oxides have been determined by Auger electron spectroscopy, X-ray photoelectron spectroscopy, O-16/O-18 secondary ion mass spectrometry, Rutherford backscattering spectroscopy, scanning and transmission electron microscopy. Electrical measurements performed on metal-insulator-semiconductor (MIS) structures indicate that the Al-containing oxides have good electrical properties making the films potentially useful for some device applications. (c) 2006 Elsevier Ltd. All rights reserved.