期刊
JOURNAL OF CRYSTAL GROWTH
卷 416, 期 -, 页码 142-147出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2015.01.034
关键词
Crystal structure; Defects; Chemical vapor deposition processes
资金
- Novel Semiconductor Power Electronics Project Realizing Low Carbon Emission Society of the Japanese Ministry of Economy, Trade and Industry (METI)
- New Energy and Industrial Technology Development Organization (NEDO)
The crystallographic structures of comet shaped defects observed on the C-face 4H-SiC epitaxial film were investigated using electron microscopy. The comet shaped defects consist of head and tail parts. The tail part is symmetric with respect to the (1 (1) over bar 00) plane in the cross-sectional image and narrows along the [(11) over bar 20] direction, i.e., along the step flow direction of epitaxial film growth on the C-face. The tail part consists of four 3C domains with characteristic twin boundaries of Sigma 3 and Sigma 27. The head part is formed by 3C and defective hexagonal-SiC polycrystalline grains during epitaxial film growth. (C). 2015 Elsevier B.V. All rights reserved.
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