期刊
BULLETIN OF THE KOREAN CHEMICAL SOCIETY
卷 33, 期 7, 页码 2207-2212出版社
WILEY-V C H VERLAG GMBH
DOI: 10.5012/bkcs.2012.33.7.2207
关键词
Non-stoichiometric AlOx; Dimethylaluminum isopropoxide (DMAI); Single precursor; beta-Hydrogen elimination; Non-volatile memory
资金
- Converging Research Center Program through the Ministry of Education, Science and Technology [2011K000604, 2011K000611]
Dimethylaluminum isopropoxide (DMAI, (CH3)(2)(AlOPr)-Pr-i) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide (AlOx) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited AlOx film was measured to be Al:O = similar to 1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that beta-hydrogen elimination mechanism is mainly contributed to the AlOx CVD process of DMAI precursor. The current-voltage characteristics of the AlOx film in Au/AlOx/Ir metal-insulator-metal (MIM) capacitor structure show high ON/OFF ratio larger than similar to 10(6) with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据